PXT8550 D3(200-350)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors PXT8550 SOT-89-3L TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT8050 2. COLLECTOR MARKING: Y2 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= -100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 Min Max Unit -40 V IC= -0.1mA, IB=0 -25 V IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -1V, IC= -100mA 85 hFE(2) VCE= -1V, IC= -800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Base-emitter on voltage VBE(on) Ic=-1V,VCE=-10mA -1 V -1.55 V DC current gain Base-emitter positive favor voltage VBEF Transition frequency output capacitance IB=-1A fT VCE= -10V, IC= -50mA Cob VCB=-10V,IE=0,f=1MHz 400 100 MHz 20 pF CLASSIFICATION OF hFE(1) Rank Range B C D D3 85-160 120-200 160-300 300-400 A,Jun,2011